TY - JOUR ID - 28455 TI - The Effect of Grain Boundary on the electrical and photoelectrical characteristics of Au/p-Si Schottky Diode JO - Al-Rafidain Engineering Journal (AREJ) JA - AREJ LA - en SN - 1813-0526 AU - Khalid Khaleel Mohamed, Dr. AD - Y1 - 2010 PY - 2010 VL - 18 IS - 3 SP - 10 EP - 18 KW - Keyword KW - Schottky Diode DO - 10.33899/rengj.2010.28455 N2 - Abstract This paper is intended to study the influence of the grain boundaries on the electronic and optoelectronic behavior of Au/P-Si Schottky diode. These diodes were fabricated by evaporation of gold layers onto polycrystalline silicon wafers using vacuum evaporation technique. The current-voltage characteristics at different grains boundary and temperatures, spectral response were investigated. It is found that the Schottky barrier height for Au/P-Si diode obtained form I-V and spectral response characteristics are depends mainly on the surface grain boundary density and state density. Keyword: Grain Boundary, Au/p-Si, Schottky Diode. UR - https://rengj.mosuljournals.com/article_28455.html L1 - https://rengj.mosuljournals.com/article_28455_fe7c142e1bf1f45fb6f6ca04f0fd0044.pdf ER -