Abstract
Abstract
The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed.
Keywords: Nanocrystal Memories.
