Abstract
Abstract
This paper is intended to study the influence of the grain boundaries on the electronic and optoelectronic behavior of Au/P-Si Schottky diode. These diodes were fabricated by evaporation of gold layers onto polycrystalline silicon wafers using vacuum evaporation technique. The current-voltage characteristics at different grains boundary and temperatures, spectral response were investigated. It is found that the Schottky barrier height for Au/P-Si diode obtained form I-V and spectral response characteristics are depends mainly on the surface grain boundary density and state density.
Keyword: Grain Boundary, Au/p-Si, Schottky Diode.
