Abstract
Abstract :
In this research thin film layers have been prepared at alternate layers of
resistive and dielectric deposited on appropriate substrates to form four – terminal RY-
NR network. If the gate of the MOS structures deposited as a strip of resistor film
like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of
analysis has been proposed to measure the shunt capacitance and the shunt
conductance of certain MOS samples. Matlab program has been used to compute shunt
capacitance and shunt conductance at different frequencies. The results computed by
this method have been compared with the results obtained by LCR meter method and
showed perfect coincident with each other.
Keywords: Thin Film R-Y-NR Network; MOS R-Y-NR Network
