Abstract
Abstract
Most of infrared detectors used in various electrical equipments have wide spectral response and usually needs front filter to prevent visible light from passing to the detector. This research is intended to study and fabricate an indium doped silicon (n) (In-Si) structure to achieve a photo detector working as narrowband infrared detector. The SCAPS program was used as a simulation tool in order to achieve the optimum structure design. Then the (In-Si) infrared detector was fabricated using vacuum evaporation deposition technique. The fabricated photodiode shows a narrowband spectral response at 940 nm. The results of the simulated and practical samples are comparable which gives a simple and cheap method for obtaining narrowband infrared detector.
Keywords: silicon, infrared, photo detector.
