Abstract
Abstract
In this paper, the effect of the band gap grading of the absorber layer Copper Indium Gallium Selenide (CIGS), which is a compound semiconductor, on the performance of the solar cell has been studied. CIGS has a tuneable band gap and it varied with the composition of the semiconductor. This study has been accomplished using the computer simulation program SCAPS-1D. The program was developed to study the photonic devices especially CIGS and CdTe thin film solar cells. The effect of the grading shape (Front, Back and Double Grading) on the performance of the cell has been studied so as to improve the efficiency of the cell.
Keywords: Band Gap Grading, CIGS, SCAPS-1D.
