Abstract
ABSTRACT This research represents fabrication and investigation for various kinds of MIOS structures as memorization devices. All structures were fabricated with dot and strip gates. The analysis is based on an investigation of charge transport in the Al2O3/SiO stacked films. It was shown that the trap-assisted tunneling is the dominant conduction mechanism through Al2O3 layer and is responsible for charge trapping into Al2O3 or Al2O3/SiO interface and into the second insulator layer. Nonvolatile digital memory switching has been observed in MIOS prepared by thermal vacuum thin film deposition.
