Abstract
Abstract:
In this paper, a comparison is done between MOS Current Mode Logic (MCML) and Complementary metal Oxide Semiconductor(CMOS) circuits operating in low power application. It is found that MCML logic circuits exhibit a decrease in delay and so decrease in overall power delayproductcompared with CMOS circuits. The tested inverter,D-latch NAND/AND, XOR/XNOR are optimized for low power and high-speed operation, according to the simulation of the circuits for lower voltage operating at data rate 2.5 GHz. This simulation is done using Advanced Design System(ADS2009).From the results shown it is seen that the MCML logic circuits reveal high efficiency and good performance at low power and high speeds which makes them to be more capable for application in the integrated circuits with high density.
