Abstract
Resistive switching random access memory is one of the novel nonvolatile memory
technologies that, has a promising future for replacing the conventional FLASH memory. In
this work a detailed study made about the types of operations and understanding the
mechanisms of the resistance changing in the device. SnO2 thin films are deposited by using
Thermal Vacuum Evaporation deposition method at room temperature on Al/glass substrate
to produce Al/SnO2/Al/glass device structure. Optical properties are taken to measure the
optical band gap of SnO2. Resistive switching is observed by taking current voltage readings
at room temperature. RRAM cell showed unipolar resistive switching behavior with no
overlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high and
low resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratio
between HRS to LRS has been found to be at least (41) within 21 cycles
